High reliability(Adoption of HVP process). www. DataSheet4U. com.
Adoption of MBIT process.
Package Dimensions
unit : mm 2079D
[2SD2689LS]
10.0 3.2
3.5 7.2
4.5
2.8
16.1
16.0
3.6
0.9
1.2
14.0
1.2
0.75 1 2 3
0.7
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Ordering number : ENN7527
2SD2689LS
NPN Triple Diffused Planar Silicon Transistor
2SD2689LS
Color TV Horizontal Deflection Output Applications
Features
High speed. High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). www.DataSheet4U.com • Adoption of MBIT process.
• •
Package Dimensions
unit : mm 2079D
[2SD2689LS]
10.0 3.2
3.5 7.2
4.5
2.8
16.1
16.0
3.6
0.9
1.2
14.0
1.2
0.75 1 2 3
0.