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Ordering number:EN550F
NPN Epitaxial Planar Silicon Transistor
2SD879
1.5V, 3V Strobe Applications
Features
· In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.
· The charge time is approximately 1 second faster than that of germanium transistors.
· Less power dissipation because of low Collector-toEmitter Voltage VCE(sat), permitting more flashes of light to be emitted.
· Small package and large allowable collector dissipation (TO-92, PC=750mW).
· Large current capacity and highly resistant to breakdown.
· Excellent linearity of hFE in the region from low current to high current.
Specifications
Package Dimensions
unit:mm 2003B
[2SD879]
5.0 4.0
4.0
0.6 2.0 14.0 5.0
0.45 0.5 0.45
123
1.3 1.3
0.
D879 Datasheet
