DBA500G Datasheet | SANYO

Features - - - Diffused Junction Silicon Diode 50A Single-Phase Bridge Rectifier Plastic molded structure. Peak reverse voltage : VRM=600V. Average output current : IO=50A. Specifications Absolute Maximum Ratings at Tc=25°C Parameter Peak Reverse Voltage Average Output Current Surge Forward Current Current Squared Time Junction Temperature Storage Temperature Dilective Strength Voltage Tightening Torque Symbol VRM IO IFSM I2t Tj Tstg Vdis TOR Terminals tc case, AC 1 minute ( ): remended value 50Hz sine 1cycle peak value, Tc=95°C, with heatsink 50Hz sine wave, non-repetitive, 1cycle peak value, Tj=25°C 1ms≤t<10ms, Tj=25°C, Rating of per diode Conditions Ratings 600 50 500 800 150 --40 to +150 2 0.8(0.6) Unit V A A A2s °C °C k V N- m Electrical Characteristics at Tc=25°C Per Constituent element of bridge. Parameter Forward Voltage Reverse Current Thremal Resistance Marking: BA500G Symbol VF IR Rth(j-c) IF=25A VR=600V With heatsink (Junction-Case) Conditions Ratings min typ max 1.05 10 0.5 Unit V µA °C / W Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, munication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications,...