Diffused Junction Silicon Diode
50A Single-Phase Bridge Rectifier
Plastic molded structure. Peak reverse voltage : VRM=600V. Average output current : IO=50A. Specifications
Absolute Maximum Ratings at Tc=25°C
Parameter Peak Reverse Voltage Average Output Current Surge Forward Current Current Squared Time Junction Temperature Storage Temperature Dilective Strength Voltage Tightening Torque Symbol VRM IO IFSM I2t Tj Tstg Vdis TOR Terminals tc case, AC 1 minute ( ).
Full PDF Text Transcription for DBA500G (Reference)
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DBA500G. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com Ordering number : ENA0699 DBA500G SANYO Semiconductors DATA SHEET DBA500G Features • • • Diffused Junction Silicon Diode 50A Single-Phase Bridge Recti...
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es • • • Diffused Junction Silicon Diode 50A Single-Phase Bridge Rectifier Plastic molded structure. Peak reverse voltage : VRM=600V. Average output current : IO=50A.
DBA500G Datasheet
