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DBA500G - Diffused Junction Silicon Diode

Features

  • Diffused Junction Silicon Diode 50A Single-Phase Bridge Rectifier Plastic molded structure. Peak reverse voltage : VRM=600V. Average output current : IO=50A. Specifications Absolute Maximum Ratings at Tc=25°C Parameter Peak Reverse Voltage Average Output Current Surge Forward Current Current Squared Time Junction Temperature Storage Temperature Dilective Strength Voltage Tightening Torque Symbol VRM IO IFSM I2t Tj Tstg Vdis TOR Terminals tc case, AC 1 minute ( ).

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Datasheet Details

Part number DBA500G
Manufacturer Sanyo Semicon Device
File Size 72.71 KB
Description Diffused Junction Silicon Diode
Datasheet download datasheet DBA500G Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com Ordering number : ENA0699 DBA500G SANYO Semiconductors DATA SHEET DBA500G Features • • • Diffused Junction Silicon Diode 50A Single-Phase Bridge Rectifier Plastic molded structure. Peak reverse voltage : VRM=600V. Average output current : IO=50A.
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