Datasheet4U Logo Datasheet4U.com

DBB10 - 1.0A Single-Phase Bridge Rectifier

Features

  • Plastic molded structure.
  • Peak reverse voltage:VRM=100 to 600V.
  • Average rectified current:IO=1.0A. Package Dimensions unit:mm 1112 [DBB10] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Peak Reverse Voltage Average Recitified Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRM IO IFSM Tj Tstg 50Hz sine wave, 1cycle Conditions DBB10B 100 → → → → DBB10E 400 → → → DBB10G 600 1.0 30 150 Unit V A A ˚C ˚C →.
  • 40 to +150 Electr.

📥 Download Datasheet

Datasheet preview – DBB10

Datasheet Details

Part number DBB10
Manufacturer Sanyo Semicon Device
File Size 40.62 KB
Description 1.0A Single-Phase Bridge Rectifier
Datasheet download datasheet DBB10 Datasheet
Additional preview pages of the DBB10 datasheet.

📁 Similar Datasheet

  • DBB08 - 0.8A Single-Phase Bridge Rectifier (ON Semiconductor)
Other Datasheets by Sanyo Semicon Device
  • DBB04 - 0.4A Single-Phase Bridge Rectifier
  • DBB08 - 0.8A Single-Phase Bridge Rectifier

Full PDF Text Transcription

Click to expand full text
Ordering number:EN1061D DBB10 Diffused Junction Silicon Diode 1.0A Single-Phase Bridge Rectifier Features · Plastic molded structure. · Peak reverse voltage:VRM=100 to 600V. · Average rectified current:IO=1.0A. Package Dimensions unit:mm 1112 [DBB10] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Peak Reverse Voltage Average Recitified Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRM IO IFSM Tj Tstg 50Hz sine wave, 1cycle Conditions DBB10B 100 → → → → DBB10E 400 → → → DBB10G 600 1.0 30 150 Unit V A A ˚C ˚C → –40 to +150 Electrical Characteristics at Ta = 25˚C, per constituent element of bridge Parameter Forward Voltage Reverse Current Symbol VF IR IF=0.5A VRM:At each VRM Conditions Ratings min typ max 1.
Published: |