Average rectified current:IO=1.0A. Package Dimensions
unit:mm 1241
[DBC10]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Peak Reverse Voltage Average Recitified Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRM IO IFSM Tj Tstg Conditions 50Hz sine wave, load resistor 50Hz sine wave, non-repetitive, 1cycle peak value DBC10C 200 → → → → DBC10E 400 → → → DBC10G 600 1.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
DBC10. For precise diagrams, and layout, please refer to the original PDF.
Ordering number:EN3405 DBC10 Silicon Diffused Junction Type 1A Single-Phase Bridge Rectifier Features · Plastic molded structure. · Peak reverse voltage:VRM=200 to 600V. ...
View more extracted text
s · Plastic molded structure. · Peak reverse voltage:VRM=200 to 600V. · Average rectified current:IO=1.0A. Package Dimensions unit:mm 1241 [DBC10] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Peak Reverse Voltage Average Recitified Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRM IO IFSM Tj Tstg Conditions 50Hz sine wave, load resistor 50Hz sine wave, non-repetitive, 1cycle peak value DBC10C 200 → → → → DBC10E 400 → → → DBC10G 600 1.0 30 150 Unit V A A ˚C ˚C → –40 to +150 Electrical Characteristics at Ta = 25˚C, per constituent element of bridge Parameter Forward Voltage R