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DFB20T - 2.0A Power Rectifier

Key Features

  • High-speed switching use.
  • Reverse recovery time trr=0.15µs max (B, C, E, G). trr=0.3µs max (J, L).
  • Peak reverse voltage:VRM=100 to 1000V.
  • Average Rectified current IO=2.0A Package Dimensions unit:mm 1177 [DFB20T] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Peak Reverse Voltage Average Recitified Current Surge Forward Current Junction Temperature Storage Temperature Parameter Peak Reverse Voltage Average Rectified Current Surge Forward Current Junction.

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Ordering number:EN2406 DFB20T Diffused Junction Type Silicon Diode 2.0A Power Rectifier Features · High-speed switching use. · Reverse recovery time trr=0.15µs max (B, C, E, G). trr=0.3µs max (J, L). · Peak reverse voltage:VRM=100 to 1000V · Average Rectified current IO=2.0A Package Dimensions unit:mm 1177 [DFB20T] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Peak Reverse Voltage Average Recitified Current Surge Forward Current Junction Temperature Storage Temperature Parameter Peak Reverse Voltage Average Rectified Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRM IO IFSM Tj Tstg Symbol VRM IO IFSM Tj Tstg Conditions Conditions DFB20TB 100 → → → → DFB20TJ 800 → → → DFB20TC 200 → → → → DFB20TL 1000 2.