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Ordering number : EN2171C
Silicon Epitaxial Planar Type
DWA010
Ultrahigh-Speed Switching Diode
Features
• Ideally suited for use in hybrid ICs because of ultrasmall package. • High switching speed. • Small interterminal capacitance.
Absolute Maximum Ratings at Ta=25°C
Peak Reverse Voltage Reverse Voltage Peak Forward Current Average Rectified Current Surge Forward Current Allowable Power Dissipation Junction Temperature Storage Temperature VRM VR IFM IFM * Io Io * IFSM 1µs IFSM * P Tj Tstg * : Total value 85 80 300 450 100 150 4 6 200 125 –55 to +125
unit V V mA mA mA mA A A mW °C °C
Electrical Characteristics at Ta=25°C
Forward Voltage VF1 VF2 VF3 IR1 IR2 C trr
min IF=1mA IF=10mA IF=100mA VR=30V VR=80V VR=0V, f=1MHz IF=10mA, VR=6V, RL=50Ω, Irr=0.1Irp
typ 0.61 0.
DWA010 Datasheet
