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EC3A04B - N-Channel Junction Silicon FET

Features

  • Small IGSS. Small Ciss. Ultraminiature package facilitates miniaturization in end products. Halogen free compliance (UL94HB). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Conditions Ratings 30 --30 10 10 100 150 --55 to +150 Unit V V mA mA mW °C °C Electrical Chara.

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Datasheet Details

Part number EC3A04B
Manufacturer Sanyo Semicon Device
File Size 79.05 KB
Description N-Channel Junction Silicon FET
Datasheet download datasheet EC3A04B Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com Ordering number : ENA0509 EC3A04B SANYO Semiconductors DATA SHEET N-Channel Junction Silicon FET EC3A04B Applicatins • Low-Frequency General-Purpose Amplifier, Impedance Converter Applications Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications. Features • • • • Small IGSS. Small Ciss. Ultraminiature package facilitates miniaturization in end products. Halogen free compliance (UL94HB).
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