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ECH8401 - N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

Key Features

  • Package Dimensions unit : mm 2222 [ECH8401] 0.25 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 0.3 0.15 8 5 2.3 2.8 0.65 2.9 Top View 0.25 1 4 0.9 0.07 Bottom View 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : ECH8 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Chann.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Ordering number : ENN7609 ECH8401 N-Channel Silicon MOSFET ECH8401 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions unit : mm 2222 [ECH8401] 0.25 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 0.3 0.15 8 5 2.3 2.8 0.65 2.9 Top View 0.25 1 4 0.9 0.07 Bottom View 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : ECH8 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg DataSheet4U.