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ECH8420 - N-Channel Silicon MOSFET

Key Features

  • N-Channel Silicon MOSFET General-Purpose Switching Device.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr Ordering number : EN8993 ECH8420 SANYO Semiconductors DATA SHEET ECH8420 Features • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications ON-resistance RDS(on)1=5.2mΩ (typ.) 1.8V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings 20 ±12 14 50 1.6 150 --55 to +150 Unit V V A A W °C °C Package Dimensions unit : mm (typ) 7011A-002 Top View 0.25 2.9 0.15 8 5 0 t o 0.02 2.8 2.