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Ordering number : ENN7780
ECH8613
ECH8613
Features
• • •
P-Channel Silicon MOSFET
High-Speed Switching Applications
Low ON-resistance. High-speed switching. 2.5V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm)1unit Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings --12 ±10 --5 --40 1.3 1.