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ECH8901 - PNP Epitaxial Planar Silicon Transistor P-Channel Silicon MOSFET

Features

  • Composite type, facilitating high-density mounting. Mounting height 0.9mm. IECO is guaranteed for preventing reverse flow from the collector to the emitter. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature [FET] Drain-t.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
ECH8901 PNP Epitaxial Planar Silicon Transistor P-Channel Silicon MOSFET
ECH8302 P-Channel Silicon MOSFET
ECH8304 P-Channel Silicon MOSFET
ECH8305 General-Purpose Switching Device
ECH8306 P-Channel Silicon MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1472 ECH8901 www.DataSheet4U.com SANYO Semiconductors DATA SHEET ECH8901 Appllications • PNP Epitaxial Planar Silicon Transistor P-Channel Silicon MOSFET General-Purpose Switching Device Applications Charger. Features • • • • Composite type, facilitating high-density mounting. Mounting height 0.9mm. IECO is guaranteed for preventing reverse flow from the collector to the emitter. Halogen free compliance.
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