EMH2301 - P-Channel Silicon MOSFET

SANYO (now Panasonic)

Key Features

General-Purpose Switching Device.

EMH2301 p-channel silicon mosfet by SANYO (now Panasonic) - Datasheet Preview

Datasheet Details

Part number	EMH2301
Manufacturer	SANYO (now Panasonic)
File Size	67.37 KB
Description	P-Channel Silicon MOSFET
Datasheet	EMH2301 Datasheet

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EMH2302	P-Channel Silicon MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Ordering number : EN8725A EMH2301 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET EMH2301 Features • General-Purpose Switching Device Applications • The EMH2301 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) 1unit Mounted on a ceramic board (900mm2!0.8mm) Conditions P-channel --20 ±12 --2 --8 1.0 1.