FC128 Datasheet | SANYO

Features - On-chip bias resistance (R1=10kΩ). - posite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. - The FC128 is formed with two chips, being equivalent to the 2SC3859, placed in one package. - Excellent in thermal equilibrium and pair capability. Electrical Connection Package Dimensions unit:mm 2067 [FC128] E1:Emitter 1 B1:Base 1 C2:Collector 2 E2:Emitter 2 B2:Base 2 C1:Collector 1 SANYO:CP6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Peak Collector Current Collector Dissipation Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC I CP PC PT Tj Tstg 1 unit Conditions Ratings 50 50 5 100 200 200 300 150 - 55 to +150 Unit V V V m A m A m W m W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage Input OFF-State Voltage Input ON-State Voltage Input Resistance Symbol ICBO IEBO h FE f T Co b VCB=40V, IE=0 VEB=5V, IC=0 VCE=5V, IC=10m A VCE=10V, IC=5m A VCB=10V, f=1MHz 50 50 0.4 0.7 7 0.55 1.2 10 0.8 3.0 13 100 250 3.3 0.1 0.3 MHz p F V V V V V kΩ Conditons Ratings min typ max 0.1 0.1 Unit µA µA VCE(sat) IC=10m A, IB=0.5m A V(BR)CBO IC=10µA, IE=0 V(BR)CEO IC=100µA, RBE=∞ VI(off) VI(on) R1 VCE=5V, IC=100µA VCE=0.2V, IC=10m A Note:The specifications shown above are for each individual transistor. Marking:128 SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/2160MO, TS No.3282-1/2 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention...