FC134 Datasheet | SANYO

Features - On-chip bias resistances (R1=10kΩ, R2=47kΩ)). - posite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. - The FC134 is formed with two chips, being equivalent to the 2SC4047, placed in one package. - Excellent in thermal equilibrium and pair capability. Electrical Connection C1:Collector 1 C2:Collector 2 B2:Base 2 EC:Emitter mon B1:Base 1 C1:Collector 1 C2:Collector 2 B2:Base 2 EC:Emitter mon B1:Base 1 SANYO:CP5 Package Dimensions unit:mm 2066 [FC134] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Peak Collector Current Collector Dissipation Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC PT Tj Tstg 1 unit Conditions Ratings 50 50 6 100 200 200 300 150 - 55 to +150 Unit V V V m A m A m W m W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage Input OFF-State Voltage Input ON-State Voltage Input Resistance Resistance Ratio Symbol ICBO ICEO IEBO h FE f T Cob VCB=40V, IE=0 VCB=40V, IE=0 VEB=5V, IC=0 VCE=5V, IC=5m A VCE=10V, IC=5m A VCB=10V, f=1MHz IC=10m A, IB=0.5m A 50 50 0.5 0.7 7 0.193 0.7 1.0 10 0.213 0.9 2.0 13 0.234 67 70 250 3.3 0.1 0.3 MHz p F V V V V V kΩ 88 Conditons Ratings min typ max 0.1 0.5 125 Unit µA µA µA VCE(sat) V(BR)CBO IC=10µA, IE=0 V(BR)CEO IC=100µA, RBE=∞ VI(off) VI(on) R1 R1/R2 VCE=5V, IC=100µA VCE=0.2V, IC=5m A Note:The specifications shown above are for each individual transistor. Marking:134 SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/2190MO, TS No.3288-1/2 No products described or contained herein are...