FC139 Description
Ordering number:EN3324 FC139 NPN Epitaxial Planar Silicon posite Transistor Low-Frequency General-Purpose Amp, General Driver Applications.
FC139 Key Features
- posite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly
- The FC139 is formed with two chips, being equivalent to the 2SC3689, placed in one package
- Adoption of FBET process
- High DC current gain (hFE=800 to 3200)
- High VEBO (VEBO≥15V)
- Excellent in thermal equilibrium and pair capability. Electrical Connection