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FC803 - 30V/ 70mA Rectifier

Key Features

  • Low forward voltage (VF max=0.55V).
  • Fast reverse recorvery time (trr max=10ns).
  • Composite type with 4 diodes contained in the CP package currently in use, improving the mounting efficiency greatly.
  • The FC803 is formed with twi chips, each being equivalent to the SB007W03C, placed in one package. Package Dimensions unit:mm 1233A [FC803] 1:Anode 2:Anode 3:Cathode 4:Anode 5:Anode 6:Cathode SANYO:CP6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Repetiti.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
FC801 Composite Diode for High-Speed Switching Applications
FC802 Composite Diode for High-Speed Switching Applications
FC804 30V/ 200mA Rectifier
FC805 30V/ 500mA Rectifier
FC806 50V/ 100mA Rectifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number :EN3193A FC803 Silicon Schottky Barrier Diode 30V, 70mA Rectifier Features · Low forward voltage (VF max=0.55V) . · Fast reverse recorvery time (trr max=10ns) . · Composite type with 4 diodes contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC803 is formed with twi chips, each being equivalent to the SB007W03C, placed in one package.