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FH105 - High-Frequency Low-Noise Amplifier/ Differential Amplifier Applications

Key Features

  • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly.
  • The FH105 is formed with two chips, being equivalent to the 2SC5245, placed in one package.
  • Excellent in thermal equilibrium and pair capability. Electrical Connection B1 E1 E2 1 2 0.65 2.0 3 0.2 0.425 Package Dimensions unit:mm 2160 [FH105] 0.425 0.15 6 5 4 1.25 2.1 0 to 0.1 Tr1 Tr2 C1 B2 C2 Specifications Absolute Maximum Ratings at Ta = 25˚C Par.

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Datasheet Details

Part number FH105
Manufacturer SANYO (now Panasonic)
File Size 63.45 KB
Description High-Frequency Low-Noise Amplifier/ Differential Amplifier Applications
Datasheet download datasheet FH105 Datasheet

Full PDF Text Transcription for FH105 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FH105. For precise diagrams, and layout, please refer to the original PDF.

Ordering number:ENN6219 NPN Epitaxial Planar Silicon Composite Transistor FH105 High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Features · Composi...

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oise Amplifier, Differential Amplifier Applications Features · Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly. · The FH105 is formed with two chips, being equivalent to the 2SC5245, placed in one package. · Excellent in thermal equilibrium and pair capability. Electrical Connection B1 E1 E2 1 2 0.65 2.0 3 0.2 0.425 Package Dimensions unit:mm 2160 [FH105] 0.425 0.15 6 5 4 1.25 2.1 0 to 0.

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