FP502 Datasheet | SANYO

Features - posite type with a high-speed N-channel MOSFET and a low-forward voltage Schottky barrier diode contained in the PCP4 package, saving the mount space greatly. Package Dimensions unit:mm 2132 [FP502] 1:Source, Anode 2:mon (Drain, Cathode) 3:Source, Anode 4mon (Drain, Cathode) 5:Gate 6:mon (Drain, Cathode) 7:mon (Drain, Cathode) SANYO:PCP4 (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Allowable Power Dissipation Storage Temperature [MOS block] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Channel Temperature [Diode block] Average Rectified Current IO 500 m A VDSS VGSS ID IDP Tch PW≤10µs, duty cycle ≤1% 11 ±10 2 8 150 V V A A ˚C Symbol PD PD Tstg Tc=25˚C, 1 unit Mounted on ceramic board (250mm2×0.8mm) 1 unit Conditions Ratings 3.5 1.5 - 55 to +150 Unit W W ˚C Electrical Characteristics at Ta=25˚C Parameter [MOS block] D-S Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance V(BR)DSS IDSS IGSS VGS(off) | Yfs | RDS(on) RDS(on) Ciss Coss Crss ID=1m A, VGS=0 VDS=10.4V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1m A VDS=10V, ID=1A ID=1A, VGS=10V ID=500m A, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1NHZ VDS=10V, f=1MHz 11 400 ±10 1.0 1.2 2.2 140 200 150 200 45 200 320 4.0 V µA µA V S mΩ mΩ p F p F p F Symbol Conditons Ratings min typ max Unit Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA(KT) 71096YK (KOTO) TA-0623 No.5263-1/4 Continued from preceding page. Parameter [MOS block] Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time [Diode block] Forward Voltage Reverse Recovery Time VF trr IF=500m A IF=500m A, di/dt=50A/µs 0.4 20 0.45 30 V ns td(on) tr td(off) tf See specified Test Circuit. See...