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Ordering number : ENN7019
FSS139
P-Channel Silicon MOSFET
FSS139
Load Switching Applications
Features
• • •
Package Dimensions
unit : mm 2116
[FSS139]
8 5
0.3 4.4 6.0
0.2 5.0 0.595 1.27
Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions
0.43
0.1
1.5
1.8max
1
4
1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8
Ratings -20 ± 10 --4 -48 1.8 150 --55 to +150
Unit V V A A W °C °C
Mounted on a ceramic board (1200mm2!0.