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FT-55U - 256K (32768 words 8 bits) SRAM Control Pins: OE and CE

Features

  • 6A, -200V, rDS(ON) = 0.650Ω.
  • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si).
  • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
  • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
  • Photo Current - 3.0nA Per-RAD (Si)/s Typically.
  • Neutron - Maintain Pre-RAD Sp.

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Datasheet Details

Part number FT-55U
Manufacturer Sanyo Semicon Device
File Size 70.29 KB
Description 256K (32768 words 8 bits) SRAM Control Pins: OE and CE
Datasheet download datasheet FT-55U Datasheet
Additional preview pages of the FT-55U datasheet.

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Full PDF Text Transcription

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FSYE923A0D, FSYE923A0R TM Data Sheet June 2000 File Number 4773.1 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADs of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
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