Click to expand full text
Ordering number:ENN6080A
N-Channel Silicon MOSFET
FTD2013
Load Switching Applications
Features
· Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. · Composite type, facilitating high-density mounting.
Package Dimensions
unit:mm 2155A
[FTD2013]
0.65 8
0.95
3.0 5
0.425
4.5 6.4
1 0.25
4
(0.95)
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Conditions Ratings 30 ±10 4.5 20 0.8 1.3 150 –55 to +150 Unit V V A A W W
Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.8mm)
0.1
Specifications
1.0
0.
FTD2013 Datasheet
