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FTS2002 - DC-DC Converter Applications

Key Features

  • Low ON resistance.
  • 4V dirve.
  • Mount height 1.1mm. Package Dimensions unit:mm 2147 3.0 0.975 0.65 [FTS2002] 0.95 8 5 0.5 1 4 0.25 0.125 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 0.1 1.0 1.2max 1:Drain 2:Source 3:Source 4:Gate.

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FTS2001 DC-DC Converter Applications
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Ordering number:EN5906 N-Channel Silicon MOSFET FTS2002 DC-DC Converter Applications Features · Low ON resistance. · 4V dirve. · Mount height 1.1mm. Package Dimensions unit:mm 2147 3.0 0.975 0.65 [FTS2002] 0.95 8 5 0.5 1 4 0.25 0.125 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 0.1 1.0 1.2max 1:Drain 2:Source 3:Source 4:Gate 5:Drain 6:Source 7:Source 8:Drain SANYO:TSSOP8 4.5 0.95 6.4 Ratings 30 ±20 5 30 1.5 150 –55 to +150 Unit V V A A W ˚C ˚C Mounted on a ceramic board (1000mm2×0.