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FW202 - Ultrahigh-Speed Switching Applications

Key Features

  • Package Dimensions.
  • Low ON resistance unit: mm.
  • Ultrahigh-speed switching. 2129-SOP8.
  • Composite type with two 4V-drive N-channel MOSFETs facilitating high-density mounting.
  • Matched pair capability. [FW202] Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage temperature Symbol VDSS VGSS I.

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FW203 Ultrahigh-Speed Switching Applications
FW211 DC-DC Converter Applications
FW211 DC-DC Converter Applications
FW213 DC-DC Converter Applications
FW213 DC-DC Converter Applications

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN5318A N-Channel Silicon MOSFET FW202 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance unit: mm • Ultrahigh-speed switching. 2129-SOP8 • Composite type with two 4V-drive N-channel MOSFETs facilitating high-density mounting. • Matched pair capability. [FW202] Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions Ratings 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.