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FX203 - P-Channel MOSFET

Key Features

  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • Low-voltage drive. Package Dimensions unit:mm 2121 [FX203] Switching Time Test CIrcuit 1:No Contact 2:Gate 3:Source 4:No Contact 5:Drain 6:Drain SANYO:XP5 (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PD Tch Tstg PW≤10.

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Full PDF Text Transcription (Reference)

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Ordering number:EN5264 FX203 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Ultrahigh-speed switching. · Low-voltage drive. Package Dimensions unit:mm 2121 [FX203] Switching Time Test CIrcuit 1:No Contact 2:Gate 3:Source 4:No Contact 5:Drain 6:Drain SANYO:XP5 (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions Ratings –30 ±20 –4 –16 8 2 150 –55 to +150 Unit V V A A W W Tc=25˚C Mounted on ceramic board (750mm2×0.