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FX605 - Ultrahigh-Speed Switching Applications

Key Features

  • Composite type composed of two low ON-resistance P-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive.
  • Facilitates high-density mounting.
  • The FX605 is formed with two chips, each being equivalent to the 2SJ190, placed in one package.
  • Matched pair characteristics. Package Dimensions unit:mm 2120 [FX605] 1:Gate1 2:Source1 3:Source2 4:Gate2 5:Drain2 6:Drain1 SANYO:XP6 (Bottom view) Switching Time Test CIrcuit Electrical Connection 1:Gate1 2:Source1.

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FX601 Ultrahigh-Speed Switching Applications
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN4888 FX605 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features · Composite type composed of two low ON-resistance P-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive. · Facilitates high-density mounting. · The FX605 is formed with two chips, each being equivalent to the 2SJ190, placed in one package. · Matched pair characteristics.