J585LS - 2SJ585LS

Features

Low ON-resistance.
Ultrahigh-speed switching.
Micaless package facilitating mounting. Package Dimensions unit:mm 2078B [2SJ585LS] 10.0 3.5 7.2 4.5 2.8 3.2 16.1 16.0 0.9 1.2 14.0 3.6 0.75 1 2 3 2.4 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty c.

Sanyo Semicon Device

Datasheet Details

Part number	J585LS
Manufacturer	Sanyo Semicon Device
File Size	101.37 KB
Description	2SJ585LS
Datasheet	J585LS Datasheet
Additional preview pages of the J585LS datasheet.

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Full PDF Text Transcription

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www.DataSheet.co.kr Ordering number:ENN6412 P-Channel Silicon MOSFET 2SJ585LS Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Ultrahigh-speed switching. · Micaless package facilitating mounting. Package Dimensions unit:mm 2078B [2SJ585LS] 10.0 3.5 7.2 4.5 2.8 3.2 16.1 16.0 0.9 1.2 14.0 3.6 0.75 1 2 3 2.4 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C 2.55 2.55 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI-LS Conditions 0.6 Ratings –250 ±30 –6.5 –26 2.

Published: Nov 17, 2011 |