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K1458 - 2SK1458

Key Features

  • Low ON-state resistance.
  • Ultrahigh-speed switching.
  • Micaless package facilitating mounting. Package Dimensions unit:mm 2078B 10.0 3.2 [2SK1458] 4.5 2.8 3.5 7.2 16.0 0.6 16.1 3.6 0.9 1.2 0.75 1 23 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 2.55 Condit.

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Full PDF Text Transcription for K1458 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K1458. For precise diagrams, and layout, please refer to the original PDF.

Ordering number:EN3461A N-Channel Silicon MOSFET 2SK1458 Ultrahigh-Speed Switching Applications Features · Low ON-state resistance. · Ultrahigh-speed switching. · Micales...

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ures · Low ON-state resistance. · Ultrahigh-speed switching. · Micaless package facilitating mounting. Package Dimensions unit:mm 2078B 10.0 3.2 [2SK1458] 4.5 2.8 3.5 7.2 16.0 0.6 16.1 3.6 0.9 1.2 0.75 1 23 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 2.55 Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta = 25˚C 2.

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