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Ordering number:ENN5531B
N-Channel Silicon MOSFET
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2SK2632LS
Ultrahigh-Speed Switching Applications
Features
· Low ON-resistance. · Low Qg.
Package Dimensions
unit:mm 2078B
[2SK2632LS]
10.0
3.5
4.5
2.8
3.2
7.2 16.0
16.1
0.9 1.2
14.0
3.6
0.7
0.75 1 2 3
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg
PW≤10µs, duty cycle≤1% Tc=25˚C
2.55
2.55
Conditions
2.4
0.6
1.2
1 : Gate 2 : Drain 3 : Source SANYO : TO220FI-LS
Ratings 800 ±30 2.5 7.5 2.0 25 150 –55 to +150
Unit V V A A W W ˚C
˚C
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K2632LS Datasheet
