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K3747 - 2SK3747

Key Features

  • Low ON-resistance, low input capacitance, ultrahigh-speed switching.
  • High reliability (Adoption of HVP process).
  • Attachment workability is good by Mica-less package.
  • Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse).
  • 1 Aval.

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Other Datasheets by SANYO (now Panasonic)

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K3702 2SK3702
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K3706 2SK3706
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN7767 www.DataSheet4U.com 2SK3747 N-Channel Silicon MOSFET 2SK3747 High-Voltage, High-Speed Switching Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • High reliability (Adoption of HVP process). • Attachment workability is good by Mica-less package. • Avalanche resistance guarantee.