LE28C1001M
Key Features
- Highly reliable 2-layer polysilicon CMOS flash EEPROM process
- Read and write operations using a 5 V single-voltage power supply
- Fast access time: 90, 120, and 150 ns
- Low power dissipation - Operating current (read): 30 mA (maximum) - Standby current: 20 µA (maximum)
- Highly reliable read/write - Erase/write cycles: 104/103 cycles - Data retention: 10 years
- Address and data latches
- Fast page rewrite operation - 128 bytes per page - Byte/page rewrite time: 5 ms (typical) - Chip rewrite time: 5 s (typical)
- Automatic rewriting using internally generated Vpp
- Hardware and software data protection functions
- Pin assignment conforms to the JEDEC byte-wide EEPROM standard
