LE28C1001M Key Features
- Highly reliable 2-layer polysilicon CMOS flash EEPROM process
- Read and write operations using a 5 V single-voltage power supply
- Fast access time: 90, 120, and 150 ns
- Low power dissipation
- Operating current (read): 30 mA (maximum)
- Standby current: 20 µA (maximum)
- Highly reliable read/write
- Erase/write cycles: 104/103 cycles
- Data retention: 10 years
- Address and data latches