LE28CV1001T-15 Key Features
- Highly reliable 2-layer polysilicon CMOS flash EEPROM process
- Read and write operations using a 5 V single-voltage power supply
- Fast access time: 120 and 150 ns
- Low power dissipation
- Operating current (read): 12 mA (maximum)
- Standby current: 15 µA (maximum)
- Highly reliable read/write -Erase/write cycles: 104/103 cycles -Data retention time: 10 years
- Address and data latches
- Fast page rewrite operation
- 128 bytes per page