LE28DW1621T-80T Key Features
- Single 3.0-Volt Read and Write Operations
- Separate Memory Banks by Address Space
- Bank1: 4Mbit (256K x 16 / 512K x 8) Flash
- Bank2: 12Mbit (768K x 16 / 1536K x 8) Flash
- Simultaneous Read and Write Capability
- 80 ns Latched Address and Data End of Write Detection
- Toggle Bit / Data # Polling / RY/BY# Write Protection by WP# pin Erase Verify Mode Flash Bank: Two Small Erase Element S
- 1K Words per Sector or 32K Words per Block
- Erase either element before Word Program CMOS I/O patibility Packages Available
- 48-Pin TSOP (12mm x 20mm) Continuous Hardware and Software Data Protection (SDP)