LE28F4001CTS-12 Datasheet | SANYO

Preliminary Specifications CMOS LSI LE28F4001CTS-12 4M-Bit (512k × 8) Flash EEPROM Features CMOS Flash EEPROM Technology Single 5-Volt Read and Write Operations Sector Erase Capability: 256 Bytes per sector Fast Access Time: 120 ns Low Power Consumption Active Current(Read): 25 m A (Max.) Standby Current: 20 µA (Max.) High Read/Write Reliability Sector-write Endurance Cycles: 104 10 Years Data Retention Latched Address and Data Self-timed Erase and Programming Byte Programming: 40µs (Max.) End of Write Detection:Toggle Bit/ DATA Polling Hardware/Software Data Protection JEDEC Standard Byte-Wide EEPROM Pinouts Packages Available LE28F4001CTS: 32-pin TSOP Normal(8×14mm) Product Description The LE28F4001C is a 512K ×8 CMOS sector erase, byte program EEPROM. The LE28F4001C is manufactured using SANYO's proprietary, high performance CMOS Flash EEPROM technology. Breakthroughs in EEPROM cell design and process architecture attain better reliability and manufacturability pared with conventional approaches. The LE28F4001C erases and programs with a 5-volt only power supply. LE28F4001C conforms to JEDEC standard pinouts for byte wide memories and is patible with existing industry standard EPROM, flash EPROM and EEPROM pinouts. Featuring high performance programming, the LE28F4001C typically byte programs in 30µs. The LE28F4001C typically sector (256 bytes) erases in 2ms. Both program and erase times can be optimized using interface feature such as Toggle bit or DATA Polling to indicate the pletion of the write cycle. To protect against an inadvertent write, the LE28F4001C has on chip hardware and software date protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, the LE28F4001C is offered with a guaranteed sector write endurance of 104 cycles. Data retention is rated greater then 10 years. The LE28F4001C is best suited for applications that require reprogrammable nonvolatile mass storage of program or data memory. For all...