LE28F4001R-20 Overview
Key Features
- Fabricated in a highly reliable 2-layer polysilicon CMOS flash EEPROM process
- Read and write operation from a 5 V single-voltage power supply
- Sector erase function: 256 bytes per sector
- Fast access time: 150/200 ns
- Operating current (read): 25 mA (maximum)
- Standby current: 20 µA (maximum)
- Highly reliable read and write operations
- Sector write cycles: 104 cycles
- Data retention time: 10 years
- Address and data latches
