LE28FV4001R-25 Description
Ordering number : EN 5468 CMOS LSI LE28FV4001M, T, R-20/25 4MEG (52488 × 8 Bits) Flash Memory Preliminary Overview The LE28FV4001M, T, R Series are 4 MEG flash memory products.
LE28FV4001R-25 Key Features
- Highly reliable 2 layer polysilicon CMOS flash EEPROM process
- Read and write operations using a 3.3 V single-voltage power supply
- High-speed access: 200 and 250 ns
- Low power
- Operating (read): 10 mA (maximum)
- Standby: 20 µA (maximum)
- Highly reliable read write -Number of sector write cycles: 104 cycles
- Data retention: 10 years
- Address and data latches
- Sector erase function: 256 bytes per sector