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MCH3339 - P-Channel Silicon MOSFET

Key Features

  • Low ON-resistance.
  • Ultrahigh-speed switching. Package Dimensions unit : mm 2167A [MCH3339] 0.3 0.15 3 2.1 1.6 0.25 0.25 21 0.65 2.0 (Bottom view) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Electrical Characteristics at Ta=25°C Conditions PW≤10µs, duty cycle≤1%.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN7414 MCH3339 P-Channel Silicon MOSFET MCH3339 Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. Package Dimensions unit : mm 2167A [MCH3339] 0.3 0.15 3 2.1 1.6 0.25 0.25 21 0.65 2.0 (Bottom view) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Electrical Characteristics at Ta=25°C Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.