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MCH5805 - P-Channel Silicon MOSFET

Features

  • Composite type with a P-channel sillicon MOSFET (MCH3314) and a Schottky barrier diode (SB01-05) contained in one package facilitating high-density mounting. [MOSFET].
  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 4V drive. [SBD].
  • Short reverse recovery time.
  • Low forward voltage. Package Dimensions unit : mm 2195 [MCH5805] 0.3 45 0.15 2.1 1.6 0.25 0.25 3 21 0.65 2.0 0.85 0.07 1 : Gate 5 4 2 : Source 3 : Anode 4 : Cathode 5 : Drai.

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Datasheet Details

Part number MCH5805
Manufacturer SANYO
File Size 40.05 KB
Description P-Channel Silicon MOSFET
Datasheet download datasheet MCH5805 Datasheet
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Full PDF Text Transcription

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Ordering number : ENN7125 MCH5805 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode MCH5805 DC / DC Converter Applications Features • Composite type with a P-channel sillicon MOSFET (MCH3314) and a Schottky barrier diode (SB01-05) contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. [SBD] • Short reverse recovery time. • Low forward voltage. Package Dimensions unit : mm 2195 [MCH5805] 0.3 45 0.15 2.1 1.6 0.25 0.25 3 21 0.65 2.0 0.85 0.
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