MCH6001 - NPN Epitaxial Planar Silicon Composite Transistor High Frequency Low-Noise Amplifier
SANYO (now Panasonic)
Key Features
NPN Epitaxial Planar Silicon Composite Transistor
High Frequency Low-Noise Amplifier
Low-noise use : NF=1.2dB typ (f=1GHz). High cut-off frequency : fT=16GHz typ (VCE=5V). High gain : |S21e|2=16dB typ (f=1GHz). Composite type with 2 RF transistor MCH4020 in one package facilitating high-density mounting. Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Cu.
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Ordering number : ENA1601
MCH6001
SANYO Semiconductors
DATA SHEET
MCH6001
Features
• • • •
NPN Epitaxial Planar Silicon Composite Transistor
High Frequency Low-Noise Amplifier
Low-noise use : NF=1.2dB typ (f=1GHz). High cut-off frequency : fT=16GHz typ (VCE=5V). High gain : |S21e|2=16dB typ (f=1GHz). Composite type with 2 RF transistor MCH4020 in one package facilitating high-density mounting.
MCH6001 Datasheet
