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MCH6406 - Ultrahigh-Speed Switching Applications

Key Features

  • Package Dimensions unit : mm 2193A [MCH6406] 0.25 0.3 4 5 6 0.15 Low ON-resistance. Ultrahigh-speed switcing. 4V drive. 2.1 1.6 0.25 3 2 0.65 2.0 0.07 1 6 5 4 (Bottom view) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditio.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr Ordering number : ENN7297 MCH6406 N-Channl Silicon MOSFET MCH6406 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions unit : mm 2193A [MCH6406] 0.25 0.3 4 5 6 0.15 Low ON-resistance. Ultrahigh-speed switcing. 4V drive. 2.1 1.6 0.25 3 2 0.65 2.0 0.07 1 6 5 4 (Bottom view) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : MCPH6 Unit 30 ±20 5 20 1.5 150 --55 to +150 V V A A W °C °C 0.