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RD0504T - High-Speed Switching Diode

Key Features

  • Diffused Junction Silicon Diode Low VF.
  • High-Speed Switching Diode.
  • VRRM=400V trr=17ns(typ. )(IF=0.5A, IR=1A) VF max=1.5V Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM Conditions Ratings 400 5 Sine wave 10ms, 1 cycle 40 150 --55 to +150 Unit V A A °C °C IO IFSM Tj Tstg Package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr Ordering number : ENA1851 RD0504T SANYO Semiconductors DATA SHEET RD0504T Features • • Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode • • VRRM=400V trr=17ns(typ.)(IF=0.5A, IR=1A) VF max=1.5V Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM Conditions Ratings 400 5 Sine wave 10ms, 1 cycle 40 150 --55 to +150 Unit V A A °C °C IO IFSM Tj Tstg Package Dimensions unit : mm (typ) 7518-002 6.5 5.0 1.5 4 2.3 0.5 Package Dimensions unit : mm (typ) 7003-001 6.5 5.0 4 2.3 1.5 0.5 5.5 7.0 0.8 1.6 7.5 1 0.5 0.6 2 0.8 1.2 3 0 t o 0.2 1.2 0.