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SB0030-04A - 40V/ 30mA Rectifier

Key Features

  • ⋅ Glass-sleeve structure. ⋅ Facilitating high-density mounting. Absolute Maximum Ratings at Ta = 25 ˚C Parameter Peak Reverse Voltage Reverse Voltage Average Rectified Current Junction Temperature Storage Temperature Symbol VRM VR IO Tj Tstg Conditions Ratings 40 40 30 125.
  • 55 to +125 Unit V V mA ˚C ˚C Electrical Characteristics Ta = 25 ˚C Parameter Forward Voltage Reverse Current Interterminal Capacitance Symbol VF IR CT IF=1 mA VR=25 V VR=1 V, f=1 MHz 2.0 Conditions Ratings min typ m.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN5596A SB0030-04A Schottky Barrier Diode 40V, 30mA Rectifier Applications ⋅ Small current rectification. Package Dimensions unit: mm 1114 [SB0030-04A] Features ⋅ Glass-sleeve structure. ⋅ Facilitating high-density mounting. Absolute Maximum Ratings at Ta = 25 ˚C Parameter Peak Reverse Voltage Reverse Voltage Average Rectified Current Junction Temperature Storage Temperature Symbol VRM VR IO Tj Tstg Conditions Ratings 40 40 30 125 –55 to +125 Unit V V mA ˚C ˚C Electrical Characteristics Ta = 25 ˚C Parameter Forward Voltage Reverse Current Interterminal Capacitance Symbol VF IR CT IF=1 mA VR=25 V VR=1 V, f=1 MHz 2.0 Conditions Ratings min typ max 0.37 0.5 Unit V µA pF SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg.