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SB20015M - Low IR Schottky Barrier Diode

Key Features

  • Small switching noise. Low leakage current and high reliability due to highly reliable planar structure. Ultrasmall package permitting applied sets to be small and slim (mounting height 0.85mm). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg Mounted on a ceramic.

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www.DataSheet4U.com Ordering number : ENA0198 SB20015M SANYO Semiconductors DATA SHEET SB20015M Applications • Low IR Schottky Barrier Diode 15V, 2.0A Rectifier High frequency rectification (switching regulators, converters, choppers). Features • • • Small switching noise. Low leakage current and high reliability due to highly reliable planar structure. Ultrasmall package permitting applied sets to be small and slim (mounting height 0.85mm). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg Mounted on a ceramic board (500mm2!0.