SB30-03P - 30V/ 3A Rectifier

Product Overview

Sanyo Semicon Device

Part number	SB30-03P
Manufacturer	Sanyo Semicon Device
File Size	67.39 KB
Description	30V/ 3A Rectifier
Datasheet	SB30-03P Datasheet
Additional preview pages of the SB30-03P datasheet.

Low forward voltage (VF max=0.55V).
Fast reverse recovery time (trr max=30ns).
Low switching noise.
Low leakage current and high reliability due to highly reliable planar structure. A:Anode C:Cathode SANYO:PCP Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg 50Hz sine.

📁 Similar Datasheet

SB30-100AM - DUAL SCHOTTKY BARRIER DIODE IN TO220 METAL PACKAGE FOR HI-REL APPLICATIONS (Seme LAB)
SB30-100MA - DUAL SCHOTTKY BARRIER DIODE IN TO220 METAL PACKAGE FOR HI-REL APPLICATIONS (Seme LAB)
SB30-100RM - DUAL SCHOTTKY BARRIER DIODE IN TO220 METAL PACKAGE FOR HI-REL APPLICATIONS (Seme LAB)
SB30-40-258AM - DUAL SCHOTTKY BARRIER DIODE IN TO258 METAL PACKAGE FOR HI-REL APPLICATIONS (Seme LAB)
SB30-40-258M - DUAL SCHOTTKY BARRIER DIODE IN TO258 METAL PACKAGE FOR HI-REL APPLICATIONS (Seme LAB)
SB30-40-258RM - DUAL SCHOTTKY BARRIER DIODE IN TO258 METAL PACKAGE FOR HI-REL APPLICATIONS (Seme LAB)
SB30-40AM - DUAL SCHOTTKY BARRIER DIODE IN TO220 METAL PACKAGE FOR HI-REL APPLICATIONS (Seme LAB)
SB30-40M - DUAL SCHOTTKY BARRIER DIODE IN TO220 METAL PACKAGE FOR HI-REL APPLICATIONS (Seme LAB)

Other Datasheets by Sanyo Semicon Device

Published: Apr 8, 2005 |