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SBJ200-06J - Schottky Barrier Diode

Features

  • Small reverse current (IR typ=10µA) due to adoption of MRJ (Multi Refined PN Junction) structure. Low forward voltage (VF typ=0.55V). High temperature operation is possible (Tj=150°C). High surge breakdown voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFS.

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Datasheet Details

Part number SBJ200-06J
Manufacturer Sanyo Semicon Device
File Size 66.90 KB
Description Schottky Barrier Diode
Datasheet download datasheet SBJ200-06J Datasheet
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Ordering number : ENA0193 SBJ200-06J SBJ200-06J Applications • High www.DataSheet4U.com Schottky Barrier Diode (Twin Type · Cathode Common) 60V, 20A Rectifier frequency rectification (switching regulators, converters, choppers). Features • • • • Small reverse current (IR typ=10µA) due to adoption of MRJ (Multi Refined PN Junction) structure. Low forward voltage (VF typ=0.55V). High temperature operation is possible (Tj=150°C). High surge breakdown voltage.
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