SCH2806
Features
- MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode
General-Purpose Switching Device Applications posite type with an N-channel silicon MOSFET (SCH1406) and a Schottky barrier diode (SBS018) contained in one package facilitating high-density mounting. [MOSFET]
- Low ON-resistance.
- Ultrahigh-speed switching.
- 1.8V drive. [SBD]
- Short reverse recovery time.
- Low forward voltage.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 15 15 0.5 3 --55 to +125 --55 to +125 V V A A °C °C VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm)...
