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SFT1350 - P-Channel Silicon MOSFET

Key Features

  • P-Channel Silicon MOSFET General-Purpose Switching Device.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr Ordering number : ENA1874 SFT1350 SANYO Semiconductors DATA SHEET SFT1350 Features • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications • • ON-resistance RDS(on)1=45mΩ(typ.) 4.5V drive Input Capacitance Ciss=590pF(typ.) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings --40 ±20 --19 --76 1.0 23 150 --55 to +150 Unit V V A A W W °C °C Package Dimensions unit : mm (typ) 7518-004 6.5 5.0 1.5 4 2.3 0.5 Package Dimensions unit : mm (typ) 7003-004 6.5 5.0 4 2.3 1.5 0.