Silicon MMIC
Wideband Amplifier
High Gain Wideband response Low current High output power Port impedance
: Gp=26.5dB typ. @1GHz : fu=3.3GHz : ICC=19mA typ : Po(1dB)=5dBm : input/output 50Ω
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Supply Voltage Circuit Current Allowable Power Dissipation Operating Temperature Storage Temperature Symbol VCC ICC PD Topr Tstg Conditions Ratings 6 40 280 --40 to +85 --55 to +150 Unit V mA mW °C.
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Ordering number : ENA1580
SMA3103
SANYO Semiconductors
DATA SHEET
SMA3103
Features
• • • • •
Silicon MMIC
Wideband Amplifier
High Gain Wideband response Low current High output power Port impedance
: Gp=26.5dB typ. @1GHz : fu=3.3GHz : ICC=19mA typ : Po(1dB)=5dBm : input/output 50Ω
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Supply Voltage Circuit Current Allowable Power Dissipation Operating Temperature Storage Temperature Symbol VCC ICC PD Topr Tstg Conditions Ratings 6 40 280 --40 to +85 --55 to +150 Unit V mA mW °C °C
Recommended Operating Condition at Ta=25°C
Parameter Supply Voltage Operating Ambient Temperature Symbol VCC Topr Conditions Ratings min 4.5 --40 typ 5 +25 max 5.