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SMA3117 - Wideband Amplifier

Key Features

  • Silicon MMIC Wideband Amplifier High Gain : Gp=33.5dB typ. @2.2GHz Wideband response : fu=3.0GHz Low current : ICC=22.7mA typ. High output power : Po(1dB)=5.7dBm Port impedance : input/output 50Ω Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Supply Voltage Circuit Current Allowable Power Dissipation Operating Temperature Storage Temperature Symbol VCC ICC PD Topr Tstg Conditions Ratings 6 40 280.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr Ordering number : EN8936 SMA3117 SANYO Semiconductors DATA SHEET SMA3117 Features • • • • • • Silicon MMIC Wideband Amplifier High Gain : Gp=33.5dB typ. @2.2GHz Wideband response : fu=3.0GHz Low current : ICC=22.7mA typ. High output power : Po(1dB)=5.7dBm Port impedance : input/output 50Ω Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Supply Voltage Circuit Current Allowable Power Dissipation Operating Temperature Storage Temperature Symbol VCC ICC PD Topr Tstg Conditions Ratings 6 40 280 --40 to +85 --55 to +150 Unit V mA mW °C °C Package Dimensions unit : mm (typ) 7022A-018 0.25 2.0 6 5 4 0 t o 0.02 0.