SPI-336-99-T1
SPI-336-99-T1 is Ultraminiature photoreflector supporting reflow soldering Single transistor type manufactured by SANYO.
Features
- Infrared LED plus Phototransistor (single)
- DIP type
- pact type : 3.4 (L) ! 2.7 (W) ! 1.5 (H) mm
- Visible light cut type
- Taping type
Absolute Maximum Ratings at Ta=25°C, 65%RH (as per JIS C7032)
Parameter Forward Current Reverse Voltage Power Dissipation Collector-Emitter Voltage Emitter-Collector Voltage Collector Curren Power Dissipation Operating Temperature Storage Temperature Symbol IF VR PD VCEO VECO IC PC Topr Tstg Rating 50 5 70 20 5 20 70 -20 to +80 -30 to +100 Unit m A V m W V V m A m W °C °C
Input LED
Output Phototransistor
Electro-Optical Characteristics at Ta=25°C, 65%RH
Parameter Symbol Forward Voltage VF Input Reverse Current IR Output Dark Current ICEO Collector Output IC Leakage Current ILEAK Collector Emitter V CE(sat) Coupled Rise Time tr Fall Time tf
- 1 Location of reflector is shown in Fig. 1. Condition IF=10m A VR=5V IF=0m A, VCE=10V IF=10m A,VCE=5V
- 1 IF=10m A,VCE=5V
- 2 IF=10m A, IC=50µA VCC=5V, RL=100Ω IC=1m A Min. 1.0 80 Typ. 1.2 5 5 Max. 1.6 10 200 1100 1 0.5 --Unit V µA n A µA µA V µs µs
AL V.E. film Glass plate (t=1mm)
- 2
- 3
No reflector Table of Classification of Collector Output Class Ic (µA) A 1100 to 450 B 600 to 260 C 350 to 150 D 200 to 80
Fig. 1
Location of Reflector
SANYO Electric Co.,Ltd. Semiconductor pany
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72199 GI, (MI) No.6030 1/6
Typical Characteristics
CAUTION These numerical value show the electrical and optical characteristics of this product, and not assure this contents.
Forward Current vs. Ambient Temperature
Power Dissipation vs. Ambient Temperature
(Rating)
Power Dissipation P (m W)
(Rating)
Forward Current IF (m...
